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DATA SHEET
MOS INTEGRATED CIRCUIT
PD29F032204AL-X
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
Description
The PD29F032204AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words x 8 bits) and WORD mode (2,097,152 words x 16 bits), are selectable so that the memory can be programmed in byte or word units. The PD29F032204AL-X can be read while its contents are being erased or programmed. The memory cell is divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other bank thanks to the simultaneous execution architecture. The banks are 16M bits and 16M bits. This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the B type has a boot sector at the lowest address (sector). Because the PD29F032204AL-X enables the boot sector to be erased, it is ideal for storing a boot program. In addition, program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided, each of which can be erased in 8K bytes units. Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification automatically. Because the PD29F032204AL-X can be electrically erased or programmed by writing an instruction, data can be reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of applications. This flash memory is packed in a 48-pin PLASTIC TSOP (I) and 63-pin TAPE FBGA.
Features
* Two bank organization enabling simultaneous execution of program / erase and read * Bank organization: 2 banks (16M bits + 16M bits) * Memory organization : 4,194,304 words x 8 bits (BYTE mode) 2,097,152 words x 16 bits (WORD mode) * Sector organization : 71 sectors (8K bytes / 4K words x 8 sectors, 64K bytes / 32K words x 63 sectors) * 2 types of sector organization * T type : Boot sector allocated to the highest address (sector) * B type : Boot sector allocated to the lowest address (sector) * 3-state output * Automatic program * Program suspend / resume
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M14912EJ7V0DS00 (7th edition) Date Published September 2002 NS CP (K) Printed in Japan
The mark # shows major revised points.
(c)
2001
PD29F032204AL-X
* Unlock bypass program * Automatic erase * Chip erase * Sector erase (sectors can be combined freely) * Erase suspend / resume * Program / Erase completion detection * Detection through data polling and toggle bits * Detection through RY (/BY) pin * Sector group protection * Any sector group can be protected * Any protected sector group can be temporary unprotected * Sectors can be used for boot application * Hardware reset and standby using /RESET pin * Automatic sleep mode * Boot block sector protect by /WP (ACC) pin * Conforms to common flash memory interface (CFI) * Extra One Time Protect Sector provided
PD29F032204AL
Access time ns (MAX.) Operating supply voltage V Power supply current (Active mode) mA (MAX.) Read -A85TX, -A85BX -B85TX, -B85BX 85 3.0 to 3.6 2.7 to 3.3 16 Program / Erase 30 5 Standby current A (MAX.)
* Operating ambient temperature: -25 to +85C * Program / erase time * Program: 9.0 s / byte (TYP.) 11.0 s / word (TYP.) * Sector erase : Program / erase cycle : 100,000 cycles 0.3 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector) Program / erase cycle : 300,000 cycles 0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector) * Program / erase cycle : 300,000 cycles (MIN.)
2
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Ordering Information
Part number Access time ns (MAX.) Operating supply voltage V Boot sector Package
PD29F032204ALGZ-A85TX-MJH PD29F032204ALGZ-A85BX-MJH PD29F032204ALF9-A85TX-BS2 PD29F032204ALF9-A85BX-BS2 PD29F032204ALGZ-B85TX-MJH PD29F032204ALGZ-B85BX-MJH PD29F032204ALF9-B85TX-BS2 PD29F032204ALF9-B85BX-BS2
85
3.0 to 3.6
Top address (sector) (T type) Bottom address (sector) (B type) Top address (sector) (T type) Bottom address (sector) (B type)
48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent)
63-pin TAPE FBGA (11 x 7)
2.7 to 3.3
Top address (sector) (T type) Bottom address (sector) (B type) Top address (sector) (T type) Bottom address (sector) (B type)
48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent)
63-pin TAPE FBGA (11 x 7)
Remark
For address organization of sectors, see section Sector Organization / Sector Address Table.
Data Sheet M14912EJ7V0DS
3
PD29F032204AL-X
Pin Configurations
/xxx indicates active low signal. 48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent) [ PD29F032204ALGZ-A85TX-MJH ] [ PD29F032204ALGZ-A85BX-MJH ] [ PD29F032204ALGZ-B85TX-MJH ] [ PD29F032204ALGZ-B85BX-MJH ]
Marking Side
A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 /WE /RESET NC /WP (ACC) RY (/BY) A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 /BYTE GND I/O15, A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 /OE GND /CE A0
A0 to A20 I/O15, A-1 /CE /WE /OE /BYTE /RESET RY (/BY) /WP (ACC) VCC GND NC
Note
: Address inputs : Data 15 Input / output (WORD mode) LSB address input (BYTE mode) : Chip Enable : Write Enable : Output Enable : Mode select : Hardware reset input : Ready (Busy) output : Write Protect (Accelerated) input : Supply Voltage : Ground : No Connection
I/O0 to I/O14 : Data Inputs / Outputs
Note Some signals can be applied because this pin is not connected to the inside of the chip. Remark Refer to Package Drawing for the 1-pin index mark. 4
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
63-pin TAPE FBGA (11 x 7) [ PD29F032204ALF9-A85TX-BS2] [ PD29F032204ALF9-A85BX-BS2] [ PD29F032204ALF9-B85TX-BS2] [ PD29F032204ALF9-B85BX-BS2]
Top View Top View Bottom View Bottom View
8 7 6 5 4 3 2 1
ABCDEFGH J K LM ABCDEFGH A B C A D B E C NC A14 A13 A10 A9 NC A20 A18 RY(/BY) A6 A18 A2 A5 A2
MLKJHGFEDCBA
Top View
F G Top View D NC A15 A14 A11 A10 A19 A20 A5 A17 A1 A4 A1 E A16 A16 SA I/O7 I/O6 I/O5 I/O2 I/O0 I/O1 A0 VSS A0
HGFEDCBA H F J G K H GND I/O14 I/O6 I/O5 I/O4 CIOs I/O3 I/O11 I/O1 I/O2 GND I/O8 L M
8 7 6 5 4 3 2 1
NC NC
NC 8 NC 7 6 5 4 3
NC NC
NC NC
NC NC 2 NC 1
A15 A13 A12 A12 A11 A9 A8 A19 A8 /WE /RESET CE2s /WE RY(/BY) /WP(ACC) /WP(ACC) /RESET A7 A17 /LB /UB A4 A3 A6 A7 A3
CIOf VSS /BYTE I/O15,A-1 I/O15, A-1 I/O7 I/O13 I/O14 I/O13 I/O12 I/O12 VCC I/O4 VCCs I/O11 I/O10 I/O3 VCCf I/O9 I/O8 I/O10 I/O9 /OE /CE I/O0 /OE /CEf /CE1s
NC NC
NC NC
A0 to A20 I/O15, A-1 /CE /WE /OE /BYTE /RESET RY (/BY) /WP (ACC) VCC GND NC
Note
: Address inputs : Data 15 Input / output (WORD mode) LSB address input (BYTE mode) : Chip Enable : Write Enable : Output Enable : Mode select : Hardware reset input : Ready (Busy) output : Write Protect (Accelerated) input : Supply Voltage : Ground : No Connection
I/O0 to I/O14 : Data Inputs / Outputs
Note Some signals can be applied because this pin is not connected to the inside of the chip. Remark Refer to Package Drawings for the index mark.
INPUT / OUTPUT PIN FUNCTION Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E).
Data Sheet M14912EJ7V0DS
5
PD29F032204AL-X
Block Diagram
VCC GND A0 to A20 Address buffers Bank 2 address
Address latch
X-decoder
Cell matrix (Bank 2)
Y-decoder
Y-gating
Bank / Sector decoder /WP(ACC) Program / Erase voltage generator /RESET /WE /BYTE /CE /OE State control (Command register) I/O0 to I/O15, A-1 SA / WC
Data latch
Input / Output buffers
SA / WC
RY (/BY)
Address latch
Y-decoder
Y-gating
Bank 1 address
X-decoder
Cell matrix (Bank 1)
6
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Sector Organization / Sector Address Table
[ -A85TX, -B85TX ]
Bank Sector Organization K bytes / K words
8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32
(1/2)
Address BYTE mode
3FFFFFH 3FE000H 3FDFFFH 3FC000H 3FBFFFH 3FA000H 3F9FFFH 3F8000H 3F7FFFH 3F6000H 3F5FFFH 3F4000H 3F3FFFH 3F2000H 3F1FFFH 3F0000H 3EFFFFH 3E0000H 3DFFFFH 3D0000H 3CFFFFH 3C0000H 3BFFFFH 3B0000H 3AFFFFH 3A0000H 39FFFFH 390000H 38FFFFH 380000H 37FFFFH 370000H 36FFFFH 360000H 35FFFFH 350000H 34FFFFH 340000H 33FFFFH 330000H 32FFFFH 320000H 31FFFFH 310000H 30FFFFH 300000H 2FFFFFH 2F0000H 2EFFFFH 2E0000H 2DFFFFH 2D0000H 2CFFFFH 2C0000H 2BFFFFH 2B0000H 2AFFFFH 2A0000H 29FFFFH 290000H 28FFFFH 280000H 27FFFFH 270000H 26FFFFH 260000H 25FFFFH 250000H 24FFFFH 240000H 23FFFFH 230000H
Sectors Address A20
FSA70 FSA69 FSA68 FSA67 FSA66 FSA65 FSA64 FSA63 FSA62 FSA61 FSA60 FSA59 FSA58 FSA57 FSA56 FSA55 FSA54 FSA53 FSA52 FSA51 FSA50 FSA49 FSA48 FSA47 FSA46 FSA45 FSA44 FSA43 FSA42 FSA41 FSA40 FSA39 FSA38 FSA37 FSA36 FSA35 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
WORD mode
1FFFFFH 1FF000H 1FEFFFH 1FE000H 1FDFFFH 1FD000H 1FCFFFH 1FC000H 1FBFFFH 1FB000H 1FAFFFH 1FA000H 1F9FFFH 1F9000H 1F8FFFH 1F8000H 1F7FFFH 1F0000H 1EFFFFH 1E8000H 1E7FFFH 1E0000H 1DFFFFH 1D8000H 1D7FFFH 1D0000H 1CFFFFH 1C8000H 1C7FFFH 1C0000H 1BFFFFH 1B8000H 1B7FFFH 1B0000H 1AFFFFH 1A8000H 1A7FFFH 1A0000H 19FFFFH 198000H 197FFFH 190000H 18FFFFH 188000H 187FFFH 180000H 17FFFFH 178000H 177FFFH 170000H 16FFFFH 168000H 167FFFH 160000H 15FFFFH 158000H 157FFFH 150000H 14FFFFH 148000H 147FFFH 140000H 13FFFFH 138000H 137FFFH 130000H 12FFFFH 128000H 127FFFH 120000H 11FFFFH 118000H
Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 1 1 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 1 0 0 0 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A13
1 1 0 0 1 1 0 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A12
1 0 1 0 1 0 1 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x x
Bank 1
Data Sheet M14912EJ7V0DS
7
PD29F032204AL-X
[ -A85TX, -B85TX ]
Bank
Bank 1
(2/2)
Address BYTE mode
22FFFFH 220000H 21FFFFH 210000H 20FFFFH 200000H 1FFFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H 1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 000000H
Sector Organization K bytes / K words
64/32 64/32 64/32
WORD mode
117FFFH 110000H 10FFFFH 108000H 107FFFH 100000H 0FFFFFH 0F8000H 0F7FFFH 0F0000H 0EFFFFH 0E8000H 0E7FFFH 0E0000H 0DFFFFH 0D8000H 0D7FFFH 0D0000H 0CFFFFH 0C8000H 0C7FFFH 0C0000H 0BFFFFH 0B8000H 0B7FFFH 0B0000H 0AFFFFH 0A8000H 0A7FFFH 0A0000H 09FFFFH 098000H 097FFFH 090000H 08FFFFH 088000H 087FFFH 080000H 07FFFFH 078000H 077FFFH 070000H 06FFFFH 068000H 067FFFH 060000H 05FFFFH 058000H 057FFFH 050000H 04FFFFH 048000H 047FFFH 040000H 03FFFFH 038000H 037FFFH 030000H 02FFFFH 028000H 027FFFH 020000H 01FFFFH 018000H 017FFFH 010000H 00FFFFH 008000H 007FFFH 000000H
Sectors Address
FSA34 FSA33 FSA32 FSA31 FSA30 FSA29 FSA28 FSA27 FSA26 FSA25 FSA24 FSA23 FSA22 FSA21 FSA20 FSA19 FSA18 FSA17 FSA16 FSA15 FSA14 FSA13 FSA12 FSA11 FSA10 FSA9 FSA8 FSA7 FSA6 FSA5 FSA4 FSA3 FSA2 FSA1 FSA0
A20
1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14
0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A13
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A12
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
Bank 2
64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32
8
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
[ -A85BX, -B85BX ]
Bank
Bank 2
(1/2)
Address BYTE mode
3FFFFFH 3F0000H 3EFFFFH 3E0000H 3DFFFFH 3D0000H 3CFFFFH 3C0000H 3BFFFFH 3B0000H 3AFFFFH 3A0000H 39FFFFH 390000H 38FFFFH 380000H 37FFFFH 370000H 36FFFFH 360000H 35FFFFH 350000H 34FFFFH 340000H 33FFFFH 330000H 32FFFFH 320000H 31FFFFH 310000H 30FFFFH 300000H 2FFFFFH 2F0000H 2EFFFFH 2E0000H 2DFFFFH 2D0000H 2CFFFFH 2C0000H 2BFFFFH 2B0000H 2AFFFFH 2A0000H 29FFFFH 290000H 28FFFFH 280000H 27FFFFH 270000H 26FFFFH 260000H 25FFFFH 250000H 24FFFFH 240000H 23FFFFH 230000H 22FFFFH 220000H 21FFFFH 210000H 20FFFFH 200000H 1FFFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H
Sector Organization K bytes / K words
64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32
WORD mode
1FFFFFH 1F8000H 1F7FFFH 1F0000H 1EFFFFH 1E8000H 1E7FFFH 1E0000H 1DFFFFH 1D8000H 1D7FFFH 1D0000H 1CFFFFH 1C8000H 1C7FFFH 1C0000H 1BFFFFH 1B8000H 1B7FFFH 1B0000H 1AFFFFH 1A8000H 1A7FFFH 1A0000H 19FFFFH 198000H 197FFFH 190000H 18FFFFH 188000H 187FFFH 180000H 17FFFFH 178000H 177FFFH 170000H 16FFFFH 168000H 167FFFH 160000H 15FFFFH 158000H 157FFFH 150000H 14FFFFH 148000H 147FFFH 140000H 13FFFFH 138000H 137FFFH 130000H 12FFFFH 128000H 127FFFH 120000H 11FFFFH 118000H 117FFFH 110000H 10FFFFH 108000H 107FFFH 100000H 0FFFFFH 0F8000H 0F7FFFH 0F0000H 0EFFFFH 0E8000H 0E7FFFH 0E0000H
Sectors Address
FSA70 FSA69 FSA68 FSA67 FSA66 FSA65 FSA64 FSA63 FSA62 FSA61 FSA60 FSA59 FSA58 FSA57 FSA56 FSA55 FSA54 FSA53 FSA52 FSA51 FSA50 FSA49 FSA48 FSA47 FSA46 FSA45 FSA44 FSA43 FSA42 FSA41 FSA40 FSA39 FSA38 FSA37 FSA36 FSA35
A20
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0
Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A13
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
A12
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
Bank 1
64/32 64/32 64/32 64/32
Data Sheet M14912EJ7V0DS
9
PD29F032204AL-X
[ -A85BX, -B85BX ]
Bank Sector Organization K bytes / K words
64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4
(2/2)
Address BYTE mode
1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 00E000H 00DFFFH 00C000H 00BFFFH 00A000H 009FFFH 008000H 007FFFH 006000H 005FFFH 004000H 003FFFH 002000H 001FFFH 000000H
Sectors Address A20
FSA34 FSA33 FSA32 FSA31 FSA30 FSA29 FSA28 FSA27 FSA26 FSA25 FSA24 FSA23 FSA22 FSA21 FSA20 FSA19 FSA18 FSA17 FSA16 FSA15 FSA14 FSA13 FSA12 FSA11 FSA10 FSA9 FSA8 FSA7 FSA6 FSA5 FSA4 FSA3 FSA2 FSA1 FSA0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
WORD mode
0DFFFFH 0D8000H 0D7FFFH 0D0000H 0CFFFFH 0C8000H 0C7FFFH 0C0000H 0BFFFFH 0B8000H 0B7FFFH 0B0000H 0AFFFFH 0A8000H 0A7FFFH 0A0000H 09FFFFH 098000H 097FFFH 090000H 08FFFFH 088000H 087FFFH 080000H 07FFFFH 078000H 077FFFH 070000H 06FFFFH 068000H 067FFFH 060000H 05FFFFH 058000H 057FFFH 050000H 04FFFFH 048000H 047FFFH 040000H 03FFFFH 038000H 037FFFH 030000H 02FFFFH 028000H 027FFFH 020000H 01FFFFH 018000H 017FFFH 010000H 00FFFFH 008000H 007FFFH 007000H 006FFFH 006000H 005FFFH 005000H 004FFFH 004000H 003FFFH 003000H 002FFFH 002000H 001FFFH 001000H 000FFFH 000000H
Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14
1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 0 0 0 0 0 x x x x x x x x x x x x x x x x x x x x x x x x x x x 1 1 1 1 0 0 0 0
A13
x x x x x x x x x x x x x x x x x x x x x x x x x x x 1 1 0 0 1 1 0 0
A12
x x x x x x x x x x x x x x x x x x x x x x x x x x x 1 0 1 0 1 0 1 0
Bank 1
10
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Sector Group Address Table
[ -A85TX, -B85TX ]
Sector group SGA0 SGA1 A20 0 0 A19 0 0 A18 0 0 A17 0 0 A16 0 0 1 1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 SGA16 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 x x x x x x x x x x x x x x 0 0 1 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 SGA24 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A15 0 1 0 1 x x x x x x x x x x x x x x 0 1 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) FSA63 FSA64 FSA65 FSA66 FSA67 FSA68 FSA69 FSA70 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 192K Bytes (3 Sectors) FSA4 to FSA7 FSA8 to FSA11 FSA12 to FSA15 FSA16 to FSA19 FSA20 to FSA23 FSA24 to FSA27 FSA28 to FSA31 FSA32 to FSA35 FSA36 to FSA39 FSA40 to FSA43 FSA44 to FSA47 FSA48 to FSA51 FSA52 to FSA55 FSA56 to FSA59 FSA60 to FSA62 A14 x x A13 x x A12 x x Size 64K Bytes (1 Sector) 192K Bytes (3 Sectors) FSA0 FSA1 to FSA3 Sector
Remark
x : VIH or VIL
Data Sheet M14912EJ7V0DS
11
PD29F032204AL-X
[ -A85BX, -B85BX ]
Sector group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 A20 0 0 0 0 0 0 0 0 0 A19 0 0 0 0 0 0 0 0 0 A18 0 0 0 0 0 0 0 0 0 A17 0 0 0 0 0 0 0 0 0 A16 0 0 0 0 0 0 0 0 0 1 1 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 SGA16 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 x x x x x x x x x x x x x x 0 0 1 SGA24 1 1 1 1 1 A15 0 0 0 0 0 0 0 0 1 0 1 x x x x x x x x x x x x x x 0 1 0 1 x x x 64K Bytes (1 Sector) FSA70 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 256K Bytes (4 Sectors) 192K Bytes (3 Sectors) FSA11 to FSA14 FSA15 to FSA18 FSA19 to FSA22 FSA23 to FSA26 FSA27 to FSA30 FSA31 to FSA34 FSA35 to FSA38 FSA39 to FSA42 FSA43 to FSA46 FSA47 to FSA50 FSA51 to FSA54 FSA55 to FSA58 FSA59 to FSA62 FSA63 to FSA66 FSA67 to FSA69 A14 0 0 0 0 1 1 1 1 x A13 0 0 1 1 0 0 1 1 x A12 0 1 0 1 0 1 0 1 x Size 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 8K Bytes (1 Sector) 192K Bytes (3 Sectors) FSA0 FSA1 FSA2 FSA3 FSA4 FSA5 FSA6 FSA7 FSA8 to FSA10 Sector
Remark
x : VIH or VIL
12
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Product ID Code (Manufacturer Code / Device Code)
Product ID Code
A20 to A12 A6 VIL VIL Input A1 VIL VIL A0 A-1 VIL VIH
Note1
Output I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 0 A-1 A-1 0 0 0 0 High-Z High-Z 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 1 0 0 1 1 1 1 0 0 1 1 1 1 0 0 0 1 0 1 0 0 0 1 0 1 1 HEX 0010H 5CH 5FH 225CH 225FH 0001H
Note2
Manufacturer Code Device BYTE code mode
-A85TX -B85TX -A85BX -B85BX
x x
VIL VIL
WORD mode
-A85TX -B85TX -A85BX -B85BX
x
VIL
VIL
VIH
x
0 0
Sector group protection
SGA
VIL
VIH
VIL
VIL
0
Notes 1. A-1 is Valid only in the BYTE mode. I/O8 to I/O14 go into high impedance state in the BYTE mode, and I/O15 is A-1 of the lowest address. 2. If 0001H is output, the sector group is protected. If 0000H is output, the sector group is unprotected. Remark x : VIH or VIL, SGA : Sector group address
Data Sheet M14912EJ7V0DS
13
PD29F032204AL-X
Command Sequence
Command sequence
Note1 Note1
Bus
1st bus Cycle Data F0H AAH
2nd bus Cycle Address RA 555H 2AAH Data RD 55H
3rd bus Cycle Address - AAAH 555H Data - F0H
4th bus Cycle Address - RA Data - RD
5th bus Cycle Address - - Data - -
6th bus Cycle Address - - Data - -
Cycle Address Read / Reset Read / Reset 1 BYTE mode WORD mode Program
Note 2 Note 3
xxxH AAAH 555H
3
BYTE mode WORD mode
4
AAAH 555H
AAH
555H 2AAH
55H
AAAH 555H
A0H
PA
PD
-
-
-
-
Program Suspend Program Resume Chip Erase
1 1 BYTE mode WORD mode 6
BA BA AAAH 555H
B0H 30H AAH
- - 555H 2AAH
- - 55H
- - AAAH 555H
- - 80H
- - AAAH 555H
- - AAH
- - 555H 2AAH
- - 55H
- - AAAH 555H
- - 10H
Sector Erase
BYTE mode WORD mode
Note 4 Note 5
6
AAAH 555H
AAH
555H 2AAH
55H
AAAH 555H
80H
AAAH 555H
AAH
555H 2AAH
55H
FSA
30H
Sector Erase Suspend Sector Erase Resume Unlock Bypass Set
1 1 3
BA BA AAAH 555H
B0H 30H AAH
- - 555H 2AAH
- - 55H
- - AAAH 555H
- - 20H
- - -
- - -
- - -
- - -
- - -
- - -
BYTE mode WORD mode
Note 6
Unlock Bypass Program Unlock Bypass Reset Product ID
2 2 3
xxxH BA AAAH
A0H 90H AAH
PA
PD
Note11
- - (BA) AAAH
- - 90H
- - IA
- - ID
- - -
- - -
- - -
- - -
Note 6
xxxH 00H 555H
BYTE mode
55H
WORD mode Sector Group Protection Sector Group Unprotect Query
Note 9 Note 7 Note 8
555H xxxH xxxH AAH 55H 3 AAAH 555H 4 AAAH 555H 6 AAAH 555H 4 AAAH 555H 4 xxxH 60H AAH AAH AAH AAH
2AAH
(BA) 555H
4 4 1
60H 60H 98H
SPA SUA -
60H 60H -
SPA SUA -
40H 40H -
SPA SUA -
SD SD -
- - -
- - -
- - -
- - -
BYTE mode WORD mode
Extra One Time Protect Sector Entry Extra One Time Protect Sector Program
Note 10
BYTE mode WORD mode BYTE mode WORD mode BYTE mode WORD mode BYTE mode WORD mode
555H 2AAH 555H 2AAH 555H 2AAH 555H 2AAH
EOTPSA
55H
AAAH 555H
88H
-
-
-
-
-
-
55H
AAAH 555H
A0H
PA
PD
-
-
-
-
Extra One Time Protect Sector Erase
Note 10
55H
AAAH 555H
80H
AAAH 555H
AAH
555H 2AAH
55H
EOTPSA
30H
Extra One Time Protect Sector Reset
Note 10
55H
AAAH 555H
90H
xxxH
00H
-
-
-
-
Extra One Time Protect Sector Protection
Note 10
60H
EOTPSA
40H
EOTPSA
SD
-
-
-
-
14
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Notes 1. 2. 3. 4. 5. 6. 7. 8. 9. Both these read / reset commands reset the device to the read mode. Programming is suspended if B0H is input to the bank address being programmed to in a program operation. Programming is resumed if 30H is input to the bank address being suspended to in a program-suspend operation. Erasure is suspended if B0H is input to the bank address being erased in a sector erase operation. Erasure is resumed if 30H is input to the bank address being suspended in a sector-erase-suspend operation. Valid only in the Unlock Bypass mode. Valid only in /RESET = VID (except in the Extra One Time Protect Sector mode). The command sequence that protects a sector group is excluded. Only A0 to A6 are valid as an address.
10. Valid only in the Extra One Time Protect Sector mode. 11. This command can be used even if this data is F0H. Remarks 1. The system should generate the following address pattern : WORD mode : 555H or 2AAH (A10 to A0) BYTE mode 2. RA RD IA : AAAH or 555H (A10 to A0, and A-1) : Read address : Read data : Address input as follows xx00H (to read the manufacturer code) xx02H (to read the device code in the BYTE mode) xx01H (to read the device code in the WORD mode) ID PA PD FSA BA : Code output. For the manufacture code, device code and sector group protection information, refer to the Product ID code. : Program address : Program data : Erase sector address. The sector to be erased is selected by the combination of A20 to A12. Refer to the Sector Organization / Sector Address Table. : Bank address. Refer to the Sector Organization / Sector Address Table.
Data Sheet M14912EJ7V0DS
15
PD29F032204AL-X
SPA
: Sector group address to be protected or protection-verified. Set the sector group address (SGA) and (A6, A1, A0) = (VIL, VIH, VIL). Sector group protection can be set for each sector group address. For details, refer DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). For the sector group address, refer to the Sector Group Address Table.
SUA
: Sector group address to be unprotected or unprotection-verified. address (SGA) and (A6, A1, A0) = (VIH, VIH, VIL).
Set the sector group
Sector group unprotect is performed for all sector group using a single command, however, unprotect verification must be performed for each sector group address. For details, refer to DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). For the sector group address, refer to the Sector Group Address Table. EOTPSA : Extra One Time Protect Sector area addresses. These addresses are 3F0000H to 3FFFFFH (BYTE mode) / 1F8000H to 1FFFFFH (WORD mode) for top boot, and 000000H to 00FFFFH (BYTE mode) / 000000H to 007FFFH (WORD mode) for bottom boot. SD : Data for verifying whether sector groups read from the address specified by SPA, SUA, EOTPSA are protected or unprotected. 3. The sector group address is don't care except when a program / erase address or read address are selected. 4. For the operation of bus, refer DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). 5. x of address bit indicates VIH or VIL.
BUS OPERATIONS, COMMANDS, HARDWARE SEQUENCE FLAGS, HARDWARE DATA PROTECTION Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E).
16
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Electrical Characteristics
Before turning on power, input GND 0.2 V to the /RESET pin until VCC VCC (MIN.). Absolute Maximum Ratings
Parameter Supply voltage Input / Output voltage Symbol VCC VT Condition with respect to GND with respect /WP(ACC), /RESET to GND Operation ambient temperature Storage temperature Tstg -55 to +125 C TA except /WP(ACC), /RESET -0.5
Note 1
Rating -0.5 to +4.0 -0.5
Note 1
Unit V V
Note 2
to +13.0
to VCC + 0.4 (4.0 V MAX.) -25 to +85
C
Notes 1. -2.0 V (MIN.) (pulse width 20 ns) 2. VCC + 2.0 V (MAX.) (pulse width 20 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions
Parameter Symbol Test condition -A85TX, -A85BX MIN. Supply voltage Operating ambient temperature VCC TA 3.0 -25 TYP. MAX. 3.6 +85 -B85TX, -B85BX MIN. 2.7 -25 TYP. MAX. 3.3 +85 V C Unit
Capacitance (TA = 25C, f = 1 MHz)
Parameter Input capacitance Input / Output capacitance Symbol CIN CI/O Test condition VIN = 0 V VI/O = 0 V MIN. TYP. MAX. TBD TBD Unit pF pF
Remarks 1. VIN : Input voltage, VI/O : Input / Output voltage 2. These parameters are not 100% tested.
Data Sheet M14912EJ7V0DS
17
PD29F032204AL-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter High level input voltage Low level input voltage High level output voltage Low level output voltage Input leakage current I/O leakage current Power supply current WORD mode Read BYTE mode Symbol VIH VIL VOH VOL ILI ILO ICC1 VCC = VCC (MAX.), /CE = VIL, /OE = VIH tCYCLE = 5 MHz tCYCLE = 1 MHz tCYCLE = 5 MHz tCYCLE = 1 MHz Program, Erase Standby ICC2 ICC3 VCC = VCC (MAX.), /CE = VIL, /OE = VIH VCC = VCC(MAX.), /CE = /RESET = /WP(ACC) = VCC 0.3 V, /OE = VIL Standby / Reset Automatic sleep mode Read during programming Read during erasing Programming during suspend Accelerated programming /RESET high level input voltage Accelerated programming voltage Low VCC lock-out voltage
Note
Test condition
MIN. 2.4 -0.3
TYP.
MAX.
VCC+0.3
Unit V V V
+0.5
IOH = -500 A, VCC = VCC (MIN.) IOL = +1.0 mA, VCC = VCC (MIN.)
2.4 0.4 -1.0 -1.0 10 2 10 2 15 0.2 +1.0 +1.0 16 4 16 4 30 5
V
A A
mA
mA
A A A
mA mA mA
ICC4 ICC5 ICC6 ICC7 ICC8
VCC = VCC (MAX.), /RESET = GND 0.2 V VIH = VCC 0.2 V, VIL = GND 0.2 V VIH = VCC 0.2 V, VIL = GND 0.2 V VIH = VCC 0.2 V, VIL = GND 0.2 V /CE = VIL, /OE = VIH, Automatic programming during suspend
0.2 0.2 21 21 17
5 5 45 45 35
IACC
/WP (ACC) pin VCC
5 15 11.5 8.5
10 30 12.5 9.5 1.7
mA
VID VACC VLKO
High Voltage is applied High Voltage is applied
V V V
Note When VCC is equal to or lower than VLKO, the device ignores all write cycles. Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). Remark These DC characteristics are in common regardless of product classification.
18
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions Input Waveform (Rise and Fall Time 5 ns)
3.0 V 1.5 V 0V Test points 1.5 V
Output Waveform
1.5 V
Test points
1.5 V
Output Load 1 TTL + 30 pF
Data Sheet M14912EJ7V0DS
19
PD29F032204AL-X
Read Cycle
Parameter Read cycle time Address access time /CE access time /OE access time Output disable time Output hold time /RESET pulse width /RESET hold time before read /RESET low to read mode /CE low to /BYTE low, high /BYTE low output disable time /BYTE high access time /OE low level time from /WE high level Symbol tRC tACC tCE tOE tDF tOH tRP tRH tREADY tELFL/tELFH tFLQZ tFHQV tOEH 85 20 /CE = /OE = VIL /OE = VIL /CE = VIL /OE = VIL or /CE = VIL 0 500 50 20 5 30 Test Condition MIN. 85 85 85 40 30 TYP. MAX. Unit ns ns ns ns ns ns ns ns Note
s
ns ns ns ns
Remark
tDF is the time from inactivation of /CE or /OE to high impedance state output.
20
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Write Cycle (Program / Erase)
Parameter Write cycle time Address setup time (/WE to address) Address setup time (/CE to address) Address hold time (/WE to address) Address hold time (/CE to address) Input data setup time Input data hold time /OE hold time Read Toggle bit, Data polling Read recovery time before write (/OE to /CE) Read recovery time before write (/OE to /WE) /WE setup time (/CE to /WE) /CE setup time (/WE to /CE) /WE hold time (/CE to /WE) /CE hold time (/WE to /CE) Write pulse width /CE pulse width Write pulse width high /CE pulse width high Byte programming operation time Word programming operation time Sector erase operation time 4K words sector 32K words sector 4K words sector 32K words sector Chip erase operation time tCER tGHEL tGHWL tWS tCS tWH tCH tWP tCP tWPH tCPH tBPG tWPG tSER Symbol tWC tAS tAS tAH tAH tDS tDH tOEH MIN. 85 0 0 45 45 35 0 0 10 0 0 0 0 0 0 35 35 30 30 9 11 0.3 0.5 0.5 0.7 33.9 48.1 Accelerated programming time Program / erase cycle VCC setup time RY (/BY) recovery time /RESET pulse width /RESET high-voltage (VID) hold time from high of RY(/BY) when sector group is temporarily unprotect /RESET hold time tRH 50 ns tVCS tRB tRP tRRB tACCPG 300,000 50 0 500 20 7 200 200 1.0 1.5 3.0 5.0 102.5 339 150 s 1,2 1,3 1,3 ns ns ns ns ns ns ns ns ns ns TYP. MAX. Unit ns ns ns ns ns ns ns ns
(1/2)
Note
s s
s 1,2
s
cycle
s
ns ns
s
Notes 1. The preprogramming time prior to the erase operation is not included. 2. Program / erase cycle : 100,000 cycles 3. Program / erase cycle : 300,000 cycles
Data Sheet M14912EJ7V0DS
21
PD29F032204AL-X
Write Cycle (Program / Erase)
Parameter From completion of automatic program / erase to data output time RY (/BY) delay time from valid program or erase operation Address setup time to /OE low in toggle bit Address hold time to /CE or /OE high in toggle bit /CE pulse width high for toggle bit /OE pulse width high for toggle bit Voltage transition time Rise time to VID (/RESET) Rise time to VACC (/WP(ACC)) Erase timeout time Erase suspend transition time tBUSY tASO tAHT tCEPH tOEPH tVLHT tVIDR tVACCR tTOW tSPD 15 0 20 20 4 500 500 50 20 90 ns ns ns ns ns Symbol tEOE MIN. TYP. MAX. 85 Unit ns
(2/2)
Note
s
ns ns
1 2 1 3 3
s s
Notes 1. Sector group protection and accelerated mode only. 2. Sector group protection only. 3. Table only. Write operation (Program / Erase) Performance
Parameter Sector erase time Description The preprogramming time prior to the erase operation is not included 4K words sector 32K words sector 4K words sector 32K words sector Chip erase time The preprogramming time prior to the erase operation is not included Byte programming time Word programming time Chip programming time Excludes system-level overhead Excludes system-level overhead Excludes system-level overhead Accelerated programming time Program / erase cycle BYTE mode WORD mode MIN. TYP. 0.3 0.5 0.5 0.7 33.9 48.1 9 11 40 25 7 300,000 150 MAX. 1.0 1.5 3.0 5.0 102.5 339 200 200 s 1 2 s 2 Unit s Note 1
s s
s
Excludes system-level overhead
s
cycle
Notes 1. Program / erase cycle : 100,000 cycles 2. Program / erase cycle : 300,000 cycles
TIMING CHARTS, FLOW CHARTS Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E).
22
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
CFI Code List
Address A6 to A0 10H 11H 12H 13H 14H 15H 16H 17H 18H 19H 1AH 1BH Data I/O15 to I/O0 0051H 0052H 0059H 0002H 0000H 0040H 0000H 0000H 0000H 0000H 0000H 0027H Minimum VCC voltage (program / erase) I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 1CH 0036H Maximum VCC voltage (program / erase) I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 1DH 1EH 1FH 20H 21H 22H 23H 24H 25H 26H 27H 28H 29H 2AH 2BH 2CH 2DH 2EH 2FH 30H 0000H 0000H 0004H 0000H 000AH 0000H 0005H 0000H 0004H 0000H 0016H 0002H 0000H 0000H 0000H 0002H 0007H 0000H 0020H 0000H Type of erase block Information about erase block 1 bit0 to bit15 : y = number of sectors bit16 to bit31 : z = size (Z x 256 Bytes) Minimum VPP voltage Maximum VPP voltage Typical word program time (2 N s) Typical buffer program time (2 N s) Typical sector erase time (2 N ms) Typical chip erase time (2 N ms) Maximum word program time (typical time x 2 N) Maximum buffer program time (typical time x 2 N) Maximum sector erasing time (typical time x 2 N) Maximum chip erasing time (typical time x 2 N) Capacity (2 N Bytes) I/O information 2 : x8/x16-bit organization Maximum number of bytes when two banks are programmed (2 N) Auxiliary command set 00H : Not supported Start address of auxiliary algorithm table Main command set 2 : AMD/FJ standard type Start address of PRIMARY table "QRY" (ASCII code) Description
(1/2)
Data Sheet M14912EJ7V0DS
23
PD29F032204AL-X
CFI Code List
Address A6 to A0 31H 32H 33H 34H 40H 41H 42H 43H 44H 45H Data I/O15 to I/O0 003EH 0000H 0000H 0001H 0050H 0052H 0049H 0031H 0032H 0000H Main version (ASCII code) Minor version (ASCII code) Address during command input 00H : Necessary 01H : Unnecessary 46H 0002H Temporary erase suspend function 00H : Not supported 01H : Read only 02H : Read / Program 47H 0001H Sector group protection 00H : Not supported 01H : Supported 48H 0001H Temporary sector group protection 00H : Not supported 01H : Supported 49H 4AH 0004H 00xxH Sector group protection algorithm Number of sectors of bank 2 00H : Not supported 20H : PD29F032204AL-X 4BH 0000H Burst mode 00H : Not supported 4CH 0000H Page mode 00H : Not supported 4DH 0085H Minimum VACC voltage I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 4EH 0095H Maximum VACC voltage I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 4FH 00xxH Boot organization 02H : Bottom boot ( -A85BX, -B85BX ) 03H : Top boot ( -A85TX, -B85TX ) 50H 0001H Temporary program suspend function 00H : Not supported 01H : Supported Description Information about erase block 2 bit0 to bit15 : y = number of sectors bit16 to bit31 : z = size (z x 256 Bytes) "PRI" (ASCII code)
(2/2)
24
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Package Drawings
48-PIN PLASTIC TSOP (I) (12x20)
detail of lead end 1 48 F G R
Q 24 25 E P I J A
L S
S K N S
C B D MM
NOTES
1) Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 2) "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.)
ITEM A B C D E F G I J K L M N P Q R S
MILLIMETERS 12.00.1 0.45 MAX. 0.5 (T.P.) 0.220.05 0.10.05 1.2 MAX. 1.00.05 18.40.1 0.80.2 0.1450.05 0.5 0.10 0.10 20.00.2 3+5 -3 0.25 0.600.15 S48GZ-50-MJH-1
Data Sheet M14912EJ7V0DS
25
PD29F032204AL-X
63-PIN TAPE FBGA (11x7)
E
w
SB
ZD
ZE
B
A D
8 7 6 5 4 3 2 1 ML K J HGF EDCBA
INDEX MARK
w
SA
A y1 S A2 S
y
S
e
A1
M
b
x
S AB
ITEM D E w A A1 A2 e b x y y1 ZD ZE
MILLIMETERS 7.000.10 11.000.10 0.20 0.970.10 0.270.05 0.70 0.80 0.450.05 0.08 0.10 0.20 0.70 1.10 P63F9-80-BS2
26
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the PD29F032204AL-X. Types of Surface Mount Device
PD29F032204ALGZ-MJH : 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) PD29F032204ALF9-BS2 : 63-pin TAPE FBGA (11 x 7)
Data Sheet M14912EJ7V0DS
27
PD29F032204AL-X
Revision History
Edition/ Date This edition 7th edition/ Sep.2002 p.16 p.20 p.15 p.19 Modification Addition Command Sequence Read Cycle p.13 Page Previous edition p.13 Modification Product ID Code Device code(Byte mode):I/O15 = Hi-ZA-1 Remark Remark 2 : SPA, SUA tOEH Type of revision Location Description (Previous edition -> This edition)
28
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
[ MEMO ]
Data Sheet M14912EJ7V0DS
29
PD29F032204AL-X
[ MEMO ]
30
Data Sheet M14912EJ7V0DS
PD29F032204AL-X
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
Data Sheet M14912EJ7V0DS
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PD29F032204AL-X
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Document Name DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information Document Number M14914E
* The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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